Electrical and optical properties of In-doped CdTe after Cd-rich annealing

Author

Belas, E. ; Grill, R. ; Toth, A.L. ; Franc, J. ; Moravec, P. ; Horodysky, P. ; Höschl, P. ; Wichert, T. ; Wolf, H.

Author_Institution

Inst. of Phys., Charles Univ., Prague

Volume

7

fYear

2004

fDate

16-22 Oct. 2004

Firstpage

4466

Lastpage

4469

Abstract

The electrical and optical properties of the conductive n-type surface layer created in high resistivity CdTe:In by annealing at 400-600degC under Cd-rich overpressure was investigated. Slightly compensated donor level with concentration N_D~1.3times10 ¹⁶ cm^-3 and ionization energy E_D~10 meV was obtained from the Hall effect measurement and the electron mobility reaches a maximum of 1times10⁴ cm²/Vs at 35 K after annealing at 600degC. Purification of the n-type layer was confirmed by photoluminescence measurement, where decreasing of the emission lines related to alkali and silver acceptors were observed. The emission line at 1.854 eV, which is expected to characterize high resistivity material, was detected in as grown high resistivity samples as well as in the conductive n-type surface layer

Keywords

Hall effect; annealing; electron mobility; photoluminescence; 35 K; 400 to 600 C; Cd-rich annealing; Cd-rich overpressure; Hall effect measurement; In-doped CdTe; alkali acceptors; conductive n-type surface layer purification; electrical properties; electron mobility; emission lines; high resistivity CdTe:In; ionization energy; optical properties; photoluminescence; silver acceptors; slightly compensated donor level; Annealing; Conducting materials; Conductivity; Electron mobility; Energy measurement; Hall effect; Ionization; Photoluminescence; Purification; Silver;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2004 IEEE

Conference_Location

Rome

ISSN

1082-3654

Print_ISBN

0-7803-8700-7

Electronic_ISBN

1082-3654

Type

conf

DOI

10.1109/NSSMIC.2004.1466876

Filename

1466876