Title :
Electrical and optical properties of In-doped CdTe after Cd-rich annealing
Author :
Belas, E. ; Grill, R. ; Toth, A.L. ; Franc, J. ; Moravec, P. ; Horodysky, P. ; Höschl, P. ; Wichert, T. ; Wolf, H.
Author_Institution :
Inst. of Phys., Charles Univ., Prague
Abstract :
The electrical and optical properties of the conductive n-type surface layer created in high resistivity CdTe:In by annealing at 400-600degC under Cd-rich overpressure was investigated. Slightly compensated donor level with concentration ND~1.3times10 16 cm-3 and ionization energy ED~10 meV was obtained from the Hall effect measurement and the electron mobility reaches a maximum of 1times104 cm2/Vs at 35 K after annealing at 600degC. Purification of the n-type layer was confirmed by photoluminescence measurement, where decreasing of the emission lines related to alkali and silver acceptors were observed. The emission line at 1.854 eV, which is expected to characterize high resistivity material, was detected in as grown high resistivity samples as well as in the conductive n-type surface layer
Keywords :
Hall effect; annealing; electron mobility; photoluminescence; 35 K; 400 to 600 C; Cd-rich annealing; Cd-rich overpressure; Hall effect measurement; In-doped CdTe; alkali acceptors; conductive n-type surface layer purification; electrical properties; electron mobility; emission lines; high resistivity CdTe:In; ionization energy; optical properties; photoluminescence; silver acceptors; slightly compensated donor level; Annealing; Conducting materials; Conductivity; Electron mobility; Energy measurement; Hall effect; Ionization; Photoluminescence; Purification; Silver;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
DOI :
10.1109/NSSMIC.2004.1466876
