Photomagnetoelectric effect of Cd-based detector materials

Author

Suzuki, K. ; Seto, S. ; Sawada, T. ; Imai, K.

Author_Institution

Dept. of Electr. & Electron. Eng., Hokkaido Univ., Sapporo

Volume

7

fYear

2004

fDate

16-22 Oct. 2004

Firstpage

4470

Lastpage

4472

Abstract

We attempt to utilize a photomagnetoelectric (PME) effect to investigate the recombination and trapping process of high resistivity CdTe and CdZnTe for nuclear detector materials. The PME short circuit current at magnetic fields up to 1 T and photoconductivity were measured for various laser light (lambda=532 nm) intensity at room temperature and 77 K. The recombination lifetime of 4.3 mus for CdZnTe and 4.5 mus for CdTe are estimated at room temperature

Keywords

electron-hole recombination; photoelectromagnetic effects; semiconductor counters; 1 T; 293 to 298 K; 77 K; Cd-based detector materials; CdZnTe; PME short circuit current; high resistivity CdTe; laser light intensity; magnetic fields; nuclear detector materials; photoconductivity; photomagnetoelectric effect; recombination lifetime; room temperature; trapping; Conductivity; Current measurement; Detectors; Magnetic field measurement; Magnetic materials; Optical materials; Photoconducting materials; Photoconductivity; Short circuit currents; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2004 IEEE

Conference_Location

Rome

ISSN

1082-3654

Print_ISBN

0-7803-8700-7

Electronic_ISBN

1082-3654

Type

conf

DOI

10.1109/NSSMIC.2004.1466877

Filename

1466877