Title :
Photomagnetoelectric effect of Cd-based detector materials
Author :
Suzuki, K. ; Seto, S. ; Sawada, T. ; Imai, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hokkaido Univ., Sapporo
Abstract :
We attempt to utilize a photomagnetoelectric (PME) effect to investigate the recombination and trapping process of high resistivity CdTe and CdZnTe for nuclear detector materials. The PME short circuit current at magnetic fields up to 1 T and photoconductivity were measured for various laser light (lambda=532 nm) intensity at room temperature and 77 K. The recombination lifetime of 4.3 mus for CdZnTe and 4.5 mus for CdTe are estimated at room temperature
Keywords :
electron-hole recombination; photoelectromagnetic effects; semiconductor counters; 1 T; 293 to 298 K; 77 K; Cd-based detector materials; CdZnTe; PME short circuit current; high resistivity CdTe; laser light intensity; magnetic fields; nuclear detector materials; photoconductivity; photomagnetoelectric effect; recombination lifetime; room temperature; trapping; Conductivity; Current measurement; Detectors; Magnetic field measurement; Magnetic materials; Optical materials; Photoconducting materials; Photoconductivity; Short circuit currents; Temperature;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
DOI :
10.1109/NSSMIC.2004.1466877
