Suppress of leakage current in polycrystalline CdZnTe X-ray detectors

Author

Kim, K.H. ; Na, Y.H. ; Park, Y.J. ; Jung, T.R. ; Kim, S.U.

Author_Institution

DXM, Gyunggido, South Korea

Volume

7

fYear

2004

fDate

16-22 Oct. 2004

Firstpage

4515

Abstract

The polycrystalline CdZnTe thick films which has high resistivity about 5×10⁹ Ωcm are grown by thermal evaporation method. Nevertheless, the leakage currents are too high. To suppress the leakage current of polycrystalline CdZnTe X-ray detectors, blocking layers using Schottky barrier was investigated. Stoichiometric surface of poly-CdZnTe layers was obtained with thermal treatment after chemical etching. The In/poly-CdZnTe Schottky barrier diodes exhibits low leakage current (14 nA/cm²) and high barrier height (φ_b=0.798 eV).

Keywords

II-VI semiconductors; Schottky barriers; Schottky diodes; X-ray detection; cadmium compounds; electrical resistivity; etching; heat treatment; indium; leakage currents; semiconductor thin films; zinc compounds; In-CdZnTe; In/poly-CdZnTe Schottky barrier diodes; Schottky barrier; barrier height; blocking layers; chemical etching; leakage current suppressing; polycrystalline CdZnTe X-ray detectors; polycrystalline CdZnTe thick films; resistivity; stoichiometric surface; thermal evaporation method; thermal treatment; Chemicals; Conductivity; Etching; Leakage current; Schottky barriers; Schottky diodes; Surface treatment; Thermal resistance; Thick films; X-ray detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2004 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-8700-7

Electronic_ISBN

1082-3654

Type

conf

DOI

10.1109/NSSMIC.2004.1466886

Filename

1466886