• DocumentCode
    3548626
  • Title

    Characterization of Sb2Te3 ohmic contacts on p-type CdTe single crystals

  • Author

    Zappettini, Andrea ; Bissoli, Francesco ; Gombia, Enos ; Bosio, Alessio ; Romeo, Nicola

  • Author_Institution
    IMEM-CNR, Parma, Italy
  • Volume
    7
  • fYear
    2004
  • fDate
    16-22 Oct. 2004
  • Firstpage
    4518
  • Abstract
    The realization of low resistivity and stable contacts on p-type CdTe is still challenging, especially if high annealing temperatures must be avoided. In this paper, the electrical characteristics of Sb2Te3 contacts on p-type CdTe single crystals are studied. It is found that the resistivity of the contacts is low and constant with time.
  • Keywords
    II-VI semiconductors; annealing; antimony compounds; cadmium compounds; electrical resistivity; ohmic contacts; Sb2Te3-CdTe; annealing temperatures; electrical characteristics; ohmic contacts; p-type CdTe single crystals; resistivity; Annealing; Conductivity; Contact resistance; Crystals; Ohmic contacts; Photovoltaic cells; Sputtering; Telephony; Tellurium; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2004 IEEE
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-8700-7
  • Electronic_ISBN
    1082-3654
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2004.1466887
  • Filename
    1466887
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3548626