The fast neutron response of silicon carbide semiconductor radiation detectors

Author

Ruddy, Frank H. ; Dulloo, Abdul R. ; Seidel, John G. ; Das, Mrinal K. ; Ryu, Sei-Hyung ; Agarwal, Anant K.

Author_Institution

Dept. of Sci. & Technol., Westinghouse Electr. Corp., Pittsburgh, PA, USA

Volume

7

fYear

2004

fDate

16-22 Oct. 2004

Firstpage

4575

Abstract

Fast neutron response measurements are reported for radiation detectors based on large-volume SiC p-i-n diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions with the silicon and carbon nuclides in the SiC detector. A high degree of linearity is observed for the ²⁸Si(n,α₁) reaction set of six energy levels in the product ²⁵Mg nucleus, and pulse height defect differences between the observed ¹²C(n,α₀) and ²⁸Si(n,α₁) energy responses are discussed. Energy spectrometry applications in fission and fusion neutron fields are also discussed.

Keywords

neutron detection; neutron-nucleus reactions; silicon radiation detectors; ¹²C(n,alpha₀); ²⁵Mg; ²⁸Si(n,alpha₁); energy spectrometry; fast neutron response measurements; fission neutron yields; fusion neutron fields; large-volume SiC p-i-n diodes; multiple reaction peaks; pulse height defect differences; silicon carbide semiconductor radiation detectors; Gamma ray detection; Gamma ray detectors; Neutrons; Radiation detectors; Schottky diodes; Semiconductor radiation detectors; Silicon carbide; Silicon radiation detectors; Spectroscopy; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2004 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-8700-7

Electronic_ISBN

1082-3654

Type

conf

DOI

10.1109/NSSMIC.2004.1466901

Filename

1466901