Title :
A 40 GHz 65 nm CMOS Phase-Locked Loop With Optimized Shunt-Peaked Buffer
Author :
Chen Feng ; Xiao Peng Yu ; Wei Meng Lim ; Kiat Seng Yeo
Author_Institution :
Zhejiang Univ., Hangzhou, China
Abstract :
A 40 GHz phase-locked loop (PLL) with an optimized shunt-peaked buffer is realized in Global Foundries 65 nm CMOS technology. The shunt-peaked buffer placed in the loop eliminates the capacitive loading of the frequency divider and enhances the drive capability. Hence it is possible to use an inductorless frequency divider to reduce potential parasitics in the layout. Thanks to the simplified topology and enhanced output swing, the proposed PLL achieves a good balance among silicon area, output range and phase noise. Measurement shows that the PLL works properly from 39.5 to 41.7 GHz with a phase noise of -102.7, -112, -119 dBc/Hz at 1, 10, and 20 MHz offset from the carrier, respectively. It occupies a chip area of 0.4 mm 2 including all the testing pads and consumes 87 mW from 1.5 V and 0.8 V supply voltage including the buffers.
Keywords :
CMOS integrated circuits; buffer circuits; circuit optimisation; elemental semiconductors; integrated circuit noise; microwave integrated circuits; network topology; phase locked loops; phase noise; silicon; CMOS phase-locked loop; CMOS technology; Global Foundries; PLL; Si; capacitive loading; frequency 39.5 GHz to 41.7 GHz; inductorless frequency divider; phase noise; power 87 mW; shunt-peaked buffer; silicon area; size 0.4 mm; size 65 nm; voltage 0.8 V; voltage 1.5 V; CMOS integrated circuits; Frequency conversion; Inductors; Phase locked loops; Phase noise; Transmission line measurements; Voltage-controlled oscillators; Frequency divider; phase noise; phase-locked loop (PLL); shunt-peaked;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2365994