Optical waveguide materials with voltage tunable polarization modes

Author

Weimin Zhou ; Shen, Haiying ; Cooke, Patrick ; Pamulapati, J. ; Newman, Paul ; Dutta, Maitreyee

Author_Institution

Army Res. Lab., Fort Monmouth, NJ, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

249

Lastpage

250

Abstract

Summary form only given. In this presentation, we introduce a new semiconductor optical waveguide material using a novel InGaAlAs variable-strain quantum well (VSQW) heterostructure in the active region, which has been demonstrated to exhibit bias controlled changes in the polarization properties of the waveguide. The VSQW has a built-in pseudomorphic strain linearly changing from compressive in one side of the quantum well to tensile strain at the other side using a gradual change of the lattice mismatch in the well.

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; light polarisation; optical materials; optical planar waveguides; semiconductor quantum wells; tuning; InGaAlAs variable-strain quantum well heterostructure; active region; bias controlled changes; built-in pseudomorphic strain; compressive strain; lattice mismatch; optical waveguide materials; polarization properties; semiconductor optical waveguide material; tensile strain; voltage tunable polarization modes; Optical control; Optical materials; Optical polarization; Optical variables control; Optical waveguides; Semiconductor materials; Semiconductor waveguides; Tensile strain; Voltage; Waveguide transitions;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864628