Title :
Direct-write gold and silicon ablation on a 100-nm scale
Author :
Smolyaninov, I.I. ; Mazzoni, D.L. ; Davis, Christopher C.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Summary form only given. The current trend in microelectronics fabrication is to reduce the number of processing steps. Laser-assisted etching and laser ablation are attractive because they do not require complicated lithographic surface preparation. However, the resolution of these laser-based techniques is limited by diffraction and, in fact, is never below the micrometer range. In the present paper we report the implementation of a near-field scanning optical/shear force microscopy technique for high-resolution surface ablation.
Keywords :
gold; integrated circuit technology; laser ablation; optical microscopy; optical resolving power; silicon; 100 nm; Au; Si; diffraction; direct-write gold ablation; direct-write silicon ablation; high-resolution surface ablation; laser ablation; laser-assisted etching; laser-based techniques; lithographic surface preparation; microelectronics fabrication; near-field scanning optical/shear force microscopy; nm scale; processing steps; Argon; Gases; Gold; Laser ablation; Optical materials; Optical pulses; Plasmas; Pulsed laser deposition; Silicon; Surface topography;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2