Direct-write gold and silicon ablation on a 100-nm scale

Author

Smolyaninov, I.I. ; Mazzoni, D.L. ; Davis, Christopher C.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

253

Lastpage

254

Abstract

Summary form only given. The current trend in microelectronics fabrication is to reduce the number of processing steps. Laser-assisted etching and laser ablation are attractive because they do not require complicated lithographic surface preparation. However, the resolution of these laser-based techniques is limited by diffraction and, in fact, is never below the micrometer range. In the present paper we report the implementation of a near-field scanning optical/shear force microscopy technique for high-resolution surface ablation.

Keywords

gold; integrated circuit technology; laser ablation; optical microscopy; optical resolving power; silicon; 100 nm; Au; Si; diffraction; direct-write gold ablation; direct-write silicon ablation; high-resolution surface ablation; laser ablation; laser-assisted etching; laser-based techniques; lithographic surface preparation; microelectronics fabrication; near-field scanning optical/shear force microscopy; nm scale; processing steps; Argon; Gases; Gold; Laser ablation; Optical materials; Optical pulses; Plasmas; Pulsed laser deposition; Silicon; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864633