Title :
Large nonbiased optical bistability device in electroabsorption modulator using symmetric two p-i-n-i-p diode structures
Author :
Kwon, Oh Kee ; Hyun, K.S. ; Kim, Kunsu ; Lee, E.-H. ; Mei, X.B. ; Tu, C.W.
Author_Institution :
Dept. of Res., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Abstract :
Summary form only given. We have successfully demonstrated an improved nonbiased optical bistability in an GaAs-AlGaAs QW electroabsorption modulator by utilizing nonresonant p-i-n-i-p structure, which has large E while maintaining sufficient light absorption with no external bias.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electro-optical switches; electroabsorption; gallium arsenide; light absorption; optical bistability; p-i-n photodiodes; GaAs-AlGaAs; GaAs-AlGaAs QW electroabsorption modulator; electroabsorption modulator; external bias; large nonbiased optical bistability device; light absorption; nonbiased optical bistability; nonresonant p-i-n-i-p structure; symmetric two p-i-n-i-p diode structures; Assembly; Electrons; Etching; Gratings; Optical bistability; Optical waveguides; Planar waveguides; Polymers; Propagation losses; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
