Title :
Microcavity optical thyristor with strained-layer InGaAs quantum wells
Author :
Bickel, G. ; De Neve, H. ; Heremans, Paul ; Kuljk, M. ; Vounckx, Roger ; Baets, Roel ; Borghs, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Summary form only given. In this paper, we present the first resuits, to our knowledge, of an NpnP optical thyristor structure embedded inside a planar microcavity. This is expected to boost the efficiency of both the emission and the detection. Additionally, the structure contains three InGaAs quantum wells (QWs) in the lower junction of the thyristor.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical resonators; photothyristors; semiconductor quantum wells; InGaAs; InGaAs quantum wells; NpnP optical thyristor structure; detection; emission; lower junction; microcavity optical thyristor; planar microcavity; strained-layer InGaAs quantum wells; Absorption; Gold; Holographic optical components; Holography; Indium gallium arsenide; Microcavities; Optical interconnections; Optical surface waves; Stimulated emission; Thyristors;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
