DocumentCode
354965
Title
Microcavity optical thyristor with strained-layer InGaAs quantum wells
Author
Bickel, G. ; De Neve, H. ; Heremans, Paul ; Kuljk, M. ; Vounckx, Roger ; Baets, Roel ; Borghs, G.
Author_Institution
IMEC, Leuven, Belgium
fYear
1996
fDate
2-7 June 1996
Firstpage
298
Lastpage
299
Abstract
Summary form only given. In this paper, we present the first resuits, to our knowledge, of an NpnP optical thyristor structure embedded inside a planar microcavity. This is expected to boost the efficiency of both the emission and the detection. Additionally, the structure contains three InGaAs quantum wells (QWs) in the lower junction of the thyristor.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical resonators; photothyristors; semiconductor quantum wells; InGaAs; InGaAs quantum wells; NpnP optical thyristor structure; detection; emission; lower junction; microcavity optical thyristor; planar microcavity; strained-layer InGaAs quantum wells; Absorption; Gold; Holographic optical components; Holography; Indium gallium arsenide; Microcavities; Optical interconnections; Optical surface waves; Stimulated emission; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location
Anaheim, CA, USA
Print_ISBN
1-55752-443-2
Type
conf
Filename
864700
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