Title :
The physical failure analysis (PFA) of IDDQ and IDDQ_delta fail in 90nm logic products
Author :
Liou, Sz-Chian ; Chuang, Jung-Hsiang ; Lee, Jon C.
Author_Institution :
Dept. of Adv. Failure Anal. Service, Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
fDate :
27 June-1 July 2005
Abstract :
As part of a manufacturing test, IDDQ method has played an indispensable role within the entire fault detection process and IIDD_delta test has been identified as one of the possible ways to extend the usability of IDDQ. For the physical failure analysis (PFA) of IDDQ/IDDQ_delta failure parts, emission microscope (EMMI) is widely used for defect site localization. And then the positive voltage contrast (PVC) and the I-V curves measurement for individual contacts by C-AFM were performed to identify the precise defect location and real leakage path. The different types of defect were observed: crystal defect induced P+/NW contact leakage and poly-silicon (poly-Si) filled into shallow trench isolation (STI) voids induced leakage are the major defects in this work.
Keywords :
crystal defects; failure analysis; fault diagnosis; integrated circuit testing; leakage currents; logic testing; nanotechnology; 90 nm; I-V curves measurement; contact leakage; crystal defect; defect site localization; emission microscope; fault detection; leakage path; logic products; manufacturing test; physical failure analysis; positive voltage contrast; shallow trench isolation; voids induced leakage; Atomic force microscopy; Circuit faults; Failure analysis; Leakage current; Logic; Manufacturing processes; Scanning electron microscopy; Semiconductor device manufacture; Transmission electron microscopy; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469129
