• DocumentCode
    3549704
  • Title

    Physical analysis of TiSi2 bridging (gate-to-S/D) failure in IC

  • Author

    Kuan, H.P. ; Zhang, X.M.

  • Author_Institution
    Syst.-On-Silicon Manuf. Co., Singapore, Singapore
  • fYear
    2005
  • fDate
    27 June-1 July 2005
  • Firstpage
    52
  • Lastpage
    55
  • Abstract
    In this paper, the procedures for reviewing the silicide bridging between the poly-gate and substrate region that encountered in the wafer fabrication are demonstrated. Mechanical parallel lapping, chemical de-processing, passive voltage contrast (PVC) technique using focus ion beam (FIB) or scanning electron microscope (SEM), and transmission electron microscopy (TEM) were employed for the physical analysis.
  • Keywords
    failure analysis; focused ion beam technology; integrated circuit testing; scanning electron microscopy; titanium compounds; transmission electron microscopy; TiSi2; bridging failure; chemical de-processing; focus ion beam; integrated circuit failure; mechanical parallel lapping; passive voltage contrast; physical analysis; scanning electron microscope; transmission electron microscopy; wafer fabrication; Chemical analysis; Contact resistance; Electron beams; Failure analysis; Lapping; Scanning electron microscopy; Silicides; Strips; Substrates; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
  • Print_ISBN
    0-7803-9301-5
  • Type

    conf

  • DOI
    10.1109/IPFA.2005.1469130
  • Filename
    1469130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3549704