Title :
Physical analysis of TiSi2 bridging (gate-to-S/D) failure in IC
Author :
Kuan, H.P. ; Zhang, X.M.
Author_Institution :
Syst.-On-Silicon Manuf. Co., Singapore, Singapore
fDate :
27 June-1 July 2005
Abstract :
In this paper, the procedures for reviewing the silicide bridging between the poly-gate and substrate region that encountered in the wafer fabrication are demonstrated. Mechanical parallel lapping, chemical de-processing, passive voltage contrast (PVC) technique using focus ion beam (FIB) or scanning electron microscope (SEM), and transmission electron microscopy (TEM) were employed for the physical analysis.
Keywords :
failure analysis; focused ion beam technology; integrated circuit testing; scanning electron microscopy; titanium compounds; transmission electron microscopy; TiSi2; bridging failure; chemical de-processing; focus ion beam; integrated circuit failure; mechanical parallel lapping; passive voltage contrast; physical analysis; scanning electron microscope; transmission electron microscopy; wafer fabrication; Chemical analysis; Contact resistance; Electron beams; Failure analysis; Lapping; Scanning electron microscopy; Silicides; Strips; Substrates; Transmission electron microscopy;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469130
