RFCMOS ESD protection and reliability

This paper addresses the ESD reliability issues in RFICs, focusing on the technology impact on the device and design. We also present the basic RF ESD protection methods used in industry. Presents the general topology of a 5 GHz LNA, which is protected using several ESD protection methodologies, and describes the 90 nm CMOS process technology used for the fabrication of the LNA. The measurement procedures used for the evaluation of stand-alone devices and LNAs are described. The ESD performance of standard ESD protection devices is reviewed and presents results and discussions on the ESD reliability of various ESD protection methods employed from the device point of view, followed by an outlook on the future RF ESD challenges, and conclusions.