Title :
Comprehensive analysis of vacancy dynamics due to electromigration
Author :
Ceric, H. ; Deshpande, V. ; Hollauer, Ch. ; Holzer, S. ; Grasser, T. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., TU Vienna, Austria
fDate :
27 June-1 July 2005
Abstract :
We presented results of electromigration analysis by means of simulation for a complex interconnect structure produced by advanced process technology simulation tools. The analysis is based on a comprehensive vacancy dynamics model including all relevant driving forces accompanying electromigration. The chosen interconnect layout is resistant against electromigration failure for the applied operating conditions.
Keywords :
electromigration; integrated circuit interconnections; integrated circuit modelling; vacancies (crystal); advanced process technology; complex interconnect structure; electromigration analysis; electromigration failure; interconnect layout; vacancy dynamics; Copper; Crystalline materials; Electromigration; Equations; Integrated circuit interconnections; Laboratories; Metallization; Microelectronics; Stress; Thermomechanical processes;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469139
