DocumentCode
3549713
Title
Comprehensive analysis of vacancy dynamics due to electromigration
Author
Ceric, H. ; Deshpande, V. ; Hollauer, Ch. ; Holzer, S. ; Grasser, T. ; Selberherr, S.
Author_Institution
Inst. for Microelectron., TU Vienna, Austria
fYear
2005
fDate
27 June-1 July 2005
Firstpage
100
Lastpage
103
Abstract
We presented results of electromigration analysis by means of simulation for a complex interconnect structure produced by advanced process technology simulation tools. The analysis is based on a comprehensive vacancy dynamics model including all relevant driving forces accompanying electromigration. The chosen interconnect layout is resistant against electromigration failure for the applied operating conditions.
Keywords
electromigration; integrated circuit interconnections; integrated circuit modelling; vacancies (crystal); advanced process technology; complex interconnect structure; electromigration analysis; electromigration failure; interconnect layout; vacancy dynamics; Copper; Crystalline materials; Electromigration; Equations; Integrated circuit interconnections; Laboratories; Metallization; Microelectronics; Stress; Thermomechanical processes;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN
0-7803-9301-5
Type
conf
DOI
10.1109/IPFA.2005.1469139
Filename
1469139
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