DocumentCode :
3549715
Title :
Backside deprocessing technique & its novel fault isolation application
Author :
Eng, Teh Tict ; Lwin, Hnin Ei ; Muthu, P. ; Chin, J.M.
Author_Institution :
Adv. Micro Devices, Singapore
fYear :
2005
fDate :
27 June-1 July 2005
Firstpage :
110
Lastpage :
113
Abstract :
As process technologies are employed below 100nm, microprocessor fault isolation has become even more challenging. In this paper, we present a backside deprocessing methodology which extends fault isolation capability for silicon-on-insulator (SOI) based product. Die level failure analysis case studies using this novel methodology are demonstrated which greatly increase the fail site isolation/defect detection sensitivity with minimum failure analysis turn around time.
Keywords :
failure analysis; integrated circuit testing; isolation technology; microprocessor chips; silicon-on-insulator; backside deprocessing technique; defect detection sensitivity; die level failure analysis; fail site isolation; microprocessor fault isolation; silicon-on-insulator; Circuit faults; Failure analysis; Isolation technology; Laser theory; Laser transitions; Microprocessors; Power lasers; Resistance heating; Silicon on insulator technology; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
Type :
conf
DOI :
10.1109/IPFA.2005.1469141
Filename :
1469141
Link To Document :
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