• DocumentCode
    3549715
  • Title

    Backside deprocessing technique & its novel fault isolation application

  • Author

    Eng, Teh Tict ; Lwin, Hnin Ei ; Muthu, P. ; Chin, J.M.

  • Author_Institution
    Adv. Micro Devices, Singapore
  • fYear
    2005
  • fDate
    27 June-1 July 2005
  • Firstpage
    110
  • Lastpage
    113
  • Abstract
    As process technologies are employed below 100nm, microprocessor fault isolation has become even more challenging. In this paper, we present a backside deprocessing methodology which extends fault isolation capability for silicon-on-insulator (SOI) based product. Die level failure analysis case studies using this novel methodology are demonstrated which greatly increase the fail site isolation/defect detection sensitivity with minimum failure analysis turn around time.
  • Keywords
    failure analysis; integrated circuit testing; isolation technology; microprocessor chips; silicon-on-insulator; backside deprocessing technique; defect detection sensitivity; die level failure analysis; fail site isolation; microprocessor fault isolation; silicon-on-insulator; Circuit faults; Failure analysis; Isolation technology; Laser theory; Laser transitions; Microprocessors; Power lasers; Resistance heating; Silicon on insulator technology; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
  • Print_ISBN
    0-7803-9301-5
  • Type

    conf

  • DOI
    10.1109/IPFA.2005.1469141
  • Filename
    1469141