DocumentCode
3549715
Title
Backside deprocessing technique & its novel fault isolation application
Author
Eng, Teh Tict ; Lwin, Hnin Ei ; Muthu, P. ; Chin, J.M.
Author_Institution
Adv. Micro Devices, Singapore
fYear
2005
fDate
27 June-1 July 2005
Firstpage
110
Lastpage
113
Abstract
As process technologies are employed below 100nm, microprocessor fault isolation has become even more challenging. In this paper, we present a backside deprocessing methodology which extends fault isolation capability for silicon-on-insulator (SOI) based product. Die level failure analysis case studies using this novel methodology are demonstrated which greatly increase the fail site isolation/defect detection sensitivity with minimum failure analysis turn around time.
Keywords
failure analysis; integrated circuit testing; isolation technology; microprocessor chips; silicon-on-insulator; backside deprocessing technique; defect detection sensitivity; die level failure analysis; fail site isolation; microprocessor fault isolation; silicon-on-insulator; Circuit faults; Failure analysis; Isolation technology; Laser theory; Laser transitions; Microprocessors; Power lasers; Resistance heating; Silicon on insulator technology; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN
0-7803-9301-5
Type
conf
DOI
10.1109/IPFA.2005.1469141
Filename
1469141
Link To Document