DocumentCode :
3549716
Title :
Low cost etchant for Ta-based copper barrier
Author :
Gabunas, C.B. ; Abitan, F.F. ; Stierman, R.J.
Author_Institution :
Failure Anal. Lab., TI Philippines Inc., Baguio, Philippines
fYear :
2005
fDate :
27 June-1 July 2005
Firstpage :
114
Lastpage :
117
Abstract :
In this paper, the result of the evaluation performed on possible etchants for Ta-based Cu barrier, ammonium hydroxide (NH4OH) + hydrogen peroxide (H2O2) and potassium hydroxide (KOH) + hydrogen peroxide solutions (H2O2) and their appropriate concentration/combination is presented with recommended etching parameters.
Keywords :
ammonium compounds; copper; diffusion barriers; hydrogen compounds; integrated circuit interconnections; sputter etching; tantalum; Ta-based copper barrier; ammonium hydroxide; etching parameter; hydrogen peroxide; potassium hydroxide; Bonding; Copper; Costs; Dielectric materials; Etching; Inspection; Laboratories; Semiconductor device packaging; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
Type :
conf
DOI :
10.1109/IPFA.2005.1469142
Filename :
1469142
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3549716
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