• DocumentCode
    3549716
  • Title

    Low cost etchant for Ta-based copper barrier

  • Author

    Gabunas, C.B. ; Abitan, F.F. ; Stierman, R.J.

  • Author_Institution
    Failure Anal. Lab., TI Philippines Inc., Baguio, Philippines
  • fYear
    2005
  • fDate
    27 June-1 July 2005
  • Firstpage
    114
  • Lastpage
    117
  • Abstract
    In this paper, the result of the evaluation performed on possible etchants for Ta-based Cu barrier, ammonium hydroxide (NH4OH) + hydrogen peroxide (H2O2) and potassium hydroxide (KOH) + hydrogen peroxide solutions (H2O2) and their appropriate concentration/combination is presented with recommended etching parameters.
  • Keywords
    ammonium compounds; copper; diffusion barriers; hydrogen compounds; integrated circuit interconnections; sputter etching; tantalum; Ta-based copper barrier; ammonium hydroxide; etching parameter; hydrogen peroxide; potassium hydroxide; Bonding; Copper; Costs; Dielectric materials; Etching; Inspection; Laboratories; Semiconductor device packaging; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
  • Print_ISBN
    0-7803-9301-5
  • Type

    conf

  • DOI
    10.1109/IPFA.2005.1469142
  • Filename
    1469142
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3549716