Title :
FIB etching of Cu with minimal impact on neighboring circuitry, including dielectric
Author :
Ng, Kelly ; Motegi, S. ; Jain, R.K. ; Lundquist, T.R. ; Makarov, VV
Author_Institution :
Credence Syst., Milpitas, CA, USA
fDate :
27 June-1 July 2005
Abstract :
The purpose of this paper is to report on success in FIB editing devices with interconnects of copper, SiO2 and low-k dielectrics. Our approach is based on using a FIB activated chemistry to decrease decomposition of dielectric as well as bind-up redeposited copper in a non-conducting state.
Keywords :
copper; dielectric materials; focused ion beam technology; integrated circuit interconnections; silicon compounds; sputter etching; Cu; Cu interconnect; FIB activated chemistry; FIB etching; SiO2; dielectric decomposition; focused ion beam technology; low-k dielectrics; nonconducting state; redeposited copper; Aluminum; Chemicals; Chemistry; Copper; Dielectric devices; Integrated circuit interconnections; Ion beams; Milling; Protection; Sputter etching;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469143
