Title :
Gate oxide reliability for nano-scale CMOS
Author :
Stathis, James H.
Author_Institution :
Res. Div., IBM Semicond. R&D Center (SRDC), Yorktown Heights, NY, USA
fDate :
27 June-1 July 2005
Abstract :
Oxide breakdown and NBTI are two physical failure mechanisms in ultra-thin gate oxide which continue to generate interest. Ongoing work in these two subjects is needed to ensure the reliability of nano-scale CMOS circuits.
Keywords :
CMOS integrated circuits; integrated circuit reliability; semiconductor device breakdown; NBTI; failure mechanism; gate oxide reliability; nano-scale CMOS circuit; oxide breakdown; ultra-thin gate oxide; Breakdown voltage; Circuits; Dielectric thin films; Electric breakdown; Leakage current; Life estimation; Lifetime estimation; Materials reliability; Research and development; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469145
