Title :
Study on cobalt salicide on patterned wafers with 0.13μm CMOS technology and below
Author :
Qin, Deng ; Zhihong, Mai ; Ran, He ; Jeffrey, Lam ; Ramesh, Rao ; Kun, Li
Author_Institution :
Technol. Dev. Dept., Chartered Semicond. Manuf. Ltd., Singapore
fDate :
27 June-1 July 2005
Abstract :
In 0.11 μm CMOS technology development, undesired cobalt salicide was found to be the cause of severe yield loss. Cobalt salicide was delaminated due to both the mechanical stress on active/shallow trench isolation (STI) and the improper cobalt salicidation. This paper presents detailed analysis of failure mechanism. X-ray diffraction (XRD) was used for the analysis of cobalt salicide on patterned wafers to determine whether the CoSi2 phase is present or not. Our experimental results showed that this method could be used for the analysis of cobalt salicide on patterned wafers.
Keywords :
CMOS integrated circuits; X-ray diffraction; cobalt compounds; delamination; failure analysis; integrated circuit yield; isolation technology; materials testing; 0.11 micron; 0.13 micron; CMOS technology; CoSi2; X-ray diffraction; cobalt salicidation; cobalt salicide; delamination; failure mechanism analysis; mechanical stress; patterned wafers; shallow trench isolation; yield loss; CMOS technology; Cobalt; Failure analysis; Pattern analysis; Scanning electron microscopy; Silicidation; Silicides; Silicon; X-ray diffraction; X-ray scattering;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
DOI :
10.1109/IPFA.2005.1469156
