DocumentCode :
3549740
Title :
Methods for searching the cause of crack
Author :
Zhang, Bin ; Chen, Ning ; Zhang, Feizhou
Author_Institution :
Q & R, Intel Products (Shanghai) Ltd., Shanghai, China
fYear :
2005
fDate :
27 June-1 July 2005
Firstpage :
222
Lastpage :
225
Abstract :
Generally, nearly every step in the manufacture of integrated silicon devices will introduce the problem of residual stresses, which will cause crack in the active devices structure. In particular, crack often happens in the wafer saw, die attach, die bond and moulding process. Some crack figure can easily be fixed such as wafer saw induced from chip out at the edge of die. But many dies which fail die crack can´t be explained exactly. In this paper, we will gives some FA cases to explain many confusing crack which is induced in die attach was highly suspected.
Keywords :
cracks; elemental semiconductors; semiconductor device manufacture; silicon; Si; active devices structure; crack; die attach; die bond; integrated silicon devices manufacture; moulding process; residual stresses; wafer saw; Assembly; Bonding forces; Manufacturing processes; Microassembly; Semiconductor device manufacture; Silicon devices; Stress; Surface cracks; Transistors; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
Type :
conf
DOI :
10.1109/IPFA.2005.1469166
Filename :
1469166
Link To Document :
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