DocumentCode
3549742
Title
Investigation and application of SEM dopant contrast on cross-section
Author
Li-Lung, Lai ; Min, Wu
Author_Institution
Semicond. Manuf. Int. (Beijing) Corp., Beijing, China
fYear
2005
fDate
27 June-1 July 2005
Firstpage
230
Lastpage
233
Abstract
The dopant profile of semiconductor device could be inspected by several known techniques. However, they are not useful or acceptable for physical failure analysis (PFA) to sample with product pattern for low yield analysis due to lack of high spatial resolution. Therefore, SEM dopant contrast is studied for further application.
Keywords
doping profiles; failure analysis; inspection; scanning electron microscopy; semiconductor device testing; specimen preparation; PFA; SEM dopant contrast; dopant profile; low yield analysis; physical failure analysis; product pattern; semiconductor device; spatial resolution; Doping profiles; Failure analysis; Holography; Scanning electron microscopy; Semiconductor device doping; Semiconductor device manufacture; Semiconductor devices; Spatial resolution; Virtual colonoscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN
0-7803-9301-5
Type
conf
DOI
10.1109/IPFA.2005.1469168
Filename
1469168
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