A review of near infrared photon emission microscopy and spectroscopy

Author

Phang, J.C.H. ; Chan, D.S.H. ; Tan, S.L. ; Len, W.B. ; Yim, K.H. ; Koh, L.S. ; Chua, C.M. ; Balk, L.J.

Author_Institution

Centre for Integrated Circuit Failure Anal. & Reliability, Singapore Nat. Univ., Singapore

fYear

2005

fDate

27 June-1 July 2005

Firstpage

275

Lastpage

281

Abstract

Near infrared photon emission microscopy is an established fault localization technique for microelectronic failure analysis. Near infrared photon spectroscopy has the potential to become a useful defect characterization technique. In this paper, near infrared photon emission microscopy and spectroscopy are reviewed together with the instrumentation developments that allow these techniques to be effectively deployed for microelectronic failure analysis. The measurement results from pn junctions and saturated MOSFETs are correlated with the various photon emission mechanisms. Additional information that can be obtained from NIR systems over visible systems are also presented.

Keywords

MOSFET; failure analysis; fault diagnosis; infrared spectroscopy; optical microscopy; p-n junctions; semiconductor device measurement; semiconductor device reliability; MOSFET; defect characterization technique; fault diagnosis; fault localization technique; microelectronic failure analysis; near infrared photon emission microscopy; near infrared spectroscopy; optical microscopy; pn junctions; semiconductor device measurement; semiconductor device reliability; Circuit faults; Electron emission; Failure analysis; Infrared spectra; Microelectronics; Microscopy; Photonic band gap; Photonic integrated circuits; Silicon; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the

Print_ISBN

0-7803-9301-5

Type

conf

DOI

10.1109/IPFA.2005.1469178

Filename

1469178