DocumentCode :
3549757
Title :
Transmission EELS attachment for SEM
Author :
Khursheed, A. ; Luo, T.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability, National Univ. of Singapore, Singapore
fYear :
2005
fDate :
27 June-1 July 2005
Firstpage :
298
Lastpage :
301
Abstract :
At present transmission electron energy loss spectrum (EELS) analysis is only carried out in transmission electron microscopes, such as transmission electron microscopes (TEMs) or scanning transmission electron microscopes (STEMs). Although elemental analysis can be done in scanning electron microscopes (SEMs) with EDX, its energy-resolution is typically limited between 100 ∼ 150eV, nearly two orders of magnitude larger than the energy resolution of EELS in TEMs/STEMs. This paper presents an EELS attachment for conventional SEMs. K edge and EELS low loss spectrum of a thin amorphous carbon film are obtained in a Philips XL30 field emission SEM. The EELS attachment has the capability of acquiring structural information and 4 eV energy resolution at 30keV primary beam energy.
Keywords :
electron energy loss spectra; scanning electron microscopes; transmission electron microscopy; 30 KeV; EDX; K edge; Philips XL30; SEM; elemental analysis; energy resolution; scanning electron microscopes; scanning transmission electron microscopes; structural information; thin amorphous carbon film; transmission EELS attachment; transmission electron energy loss spectrum; Electron beams; Energy loss; Energy resolution; Failure analysis; Filters; Focusing; Magnetic separation; Scanning electron microscopy; Spectroscopy; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. Proceedings of the 12th International Symposium on the
Print_ISBN :
0-7803-9301-5
Type :
conf
DOI :
10.1109/IPFA.2005.1469183
Filename :
1469183
Link To Document :
بازگشت