Dual stress liner enhancement in hybrid orientation technology

Author

Sheraw, D. ; Yang, M. ; Fried, D.M. ; Costrini, G. ; Kanarsky, T. ; Lee, W.-H. ; Chan, V. ; Fischetti, M.V. ; Holt, J. ; Black, L. ; Naeem, M. ; Panda, S. ; Economikos, L. ; Groschopf, J. ; Kapur, A. ; Li, Y. ; Mo, R.T. ; Bonnoit, A. ; Degraw, D. ; Luning

Author_Institution

IBM Syst. & Technol. Group, IBM Semicond. R&D Center, USA

fYear

2005

fDate

14-16 June 2005

Firstpage

12

Lastpage

13

Abstract

Hybrid orientation technology (HOT) has been successfully integrated with a dual stress liner (DSL) process to demonstrate outstanding PFET device characteristics in epitaxially grown [110] bulk silicon. Stress induced by the nitride MOL liners results in mobility enhancement that depends on the designed orientation of the gate, in agreement with theory. Compressive stressed liner films are utilized to increase HOT PFET saturation current to 635 uA/um I_DSat at 100 nA/um I_OFF for V_DD=1.0 V at a 45 nm gate length. The AC performance of a HOT ring oscillator shows 14% benefit from [110] silicon and an additional 8% benefit due to the compressive MOL film.

Keywords

MOSFET; carrier mobility; epitaxial growth; isolation technology; nickel compounds; oscillators; semiconductor device models; semiconductor device reliability; silicon; silicon-on-insulator; stress analysis; stress effects; 1 V; 45 nm; AC performance; DSL; HOT ring oscillator; PFET; Si; bulk silicon; compressive MOL film; compressive stressed liner film; dual stress liner enhancement; hybrid orientation technology; mobility enhancement; nitride MOL liner; Compressive stress; DSL; Etching; Fabrication; Hybrid junctions; Implants; Research and development; Ring oscillators; Silicon; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469192

Filename

1469192