Author :
Sheraw, D. ; Yang, M. ; Fried, D.M. ; Costrini, G. ; Kanarsky, T. ; Lee, W.-H. ; Chan, V. ; Fischetti, M.V. ; Holt, J. ; Black, L. ; Naeem, M. ; Panda, S. ; Economikos, L. ; Groschopf, J. ; Kapur, A. ; Li, Y. ; Mo, R.T. ; Bonnoit, A. ; Degraw, D. ; Luning
Abstract :
Hybrid orientation technology (HOT) has been successfully integrated with a dual stress liner (DSL) process to demonstrate outstanding PFET device characteristics in epitaxially grown [110] bulk silicon. Stress induced by the nitride MOL liners results in mobility enhancement that depends on the designed orientation of the gate, in agreement with theory. Compressive stressed liner films are utilized to increase HOT PFET saturation current to 635 uA/um IDSat at 100 nA/um IOFF for VDD=1.0 V at a 45 nm gate length. The AC performance of a HOT ring oscillator shows 14% benefit from [110] silicon and an additional 8% benefit due to the compressive MOL film.
Keywords :
MOSFET; carrier mobility; epitaxial growth; isolation technology; nickel compounds; oscillators; semiconductor device models; semiconductor device reliability; silicon; silicon-on-insulator; stress analysis; stress effects; 1 V; 45 nm; AC performance; DSL; HOT ring oscillator; PFET; Si; bulk silicon; compressive MOL film; compressive stressed liner film; dual stress liner enhancement; hybrid orientation technology; mobility enhancement; nitride MOL liner; Compressive stress; DSL; Etching; Fabrication; Hybrid junctions; Implants; Research and development; Ring oscillators; Silicon; Tungsten;
