Author :
Eneman, Geert ; Verheyen, P. ; Rooyackers, R. ; Nouri, F. ; Washington, L. ; Degraeve, R. ; Kaczer, B. ; Moroz, V. ; De Keersgieter, An ; Schreutelkamp, R. ; Kawaguchi, M. ; Kim, Y. ; Samoilov, A. ; Smith, L. ; Absil, P.P. ; De Meyer, K. ; Jurczak, M. ; B
Abstract :
We present a study on the layout dependence of a SiGe S/D PMOSFET technology. While 65% increase in drive current is obtained for 45nm gate length transistors with large active areas, measurements and simulations show that this improvement may be seriously degraded when transistor dimensions, such as the source-drain length (L sd/) and the device width are further scaled. TDDB and NBTI measurements show that the oxide reliability is not degraded for this technology.
Keywords :
Ge-Si alloys; MOSFET; semiconductor device reliability; 45 nm; NBTI; S-D PMOSFET technology; SiGe; TDDB; gate length transistors; layout dependence; oxide reliability; source-drain length; Compressive stress; Current measurement; Degradation; Etching; Germanium silicon alloys; Length measurement; MOSFET circuits; Niobium compounds; Silicon germanium; Titanium compounds;
