Author :
Zhang, D. ; Nguyen, B.Y. ; White, T. ; Goolsby, B. ; Nguyen, T. ; Dhandapani, V. ; Hildreth, J. ; Foisy, M. ; Adams, V. ; Shiho, Y. ; Thean, A. ; Theodore, D. ; Canonico, M. ; Zollner, S. ; Bagchi, S. ; Murphy, S. ; Rai, R. ; Jiang, J. ; Jahanbani, M. ; N
Author_Institution :
Freescale Semicond. Inc., Technol. Solutions Organ., Austin, TX, USA
Abstract :
We report for the first time PMOS drive current enhancement with in-situ boron doped SiGe incorporation in recessed S/D regions for devices built on thin body SOI substrate. For P-channel PD-SOI devices with 450 A silicon on insulator and 38nm gate length, 35% linear drain current enhancement and 20% saturation drain current improvement have been achieved with this approach. Device integration and performance improvement are discussed below.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; insulators; semiconductor doping; silicon-on-insulator; substrates; 38 nm; 450 A; PD-SOI device; S-D PMOS; SiGe:B; device integration; in-situ boron; insulator; linear drain current enhancement; saturation drain current improvement; thin body SOI substrate; Annealing; Capacitive sensors; Compressive stress; Cotton; Crystallization; Germanium silicon alloys; Silicon germanium; Silicon on insulator technology; Strain measurement; Substrates;
