Strained-silicon MOSFETs of low leakage current and high breakdown voltage for analog applications

Author

Sugii, N. ; Kondo, M. ; Miyamoto, M. ; Hoshino, Y. ; Hatori, M. ; Hirasawa, W. ; Kimura, Y. ; Kimura, S. ; Kondo, Y. ; Yoshida, I.

Author_Institution

Central Res. Lab., Hitachi, Ltd., Tokyo, Japan

fYear

2005

fDate

14-16 June 2005

Firstpage

54

Lastpage

55

Abstract

Strained-silicon MOSFETs of both high breakdown voltage and low leakage current were fabricated by employing a thick strained-silicon layer. It is demonstrated that proper control of junction depth can drastically reduce leakage current although misfit dislocations exist at the strained-silicon/SiGe interface, and that breakdown voltage of strained-silicon MOSFETs kept the same high value as silicon MOSFETs even at elevated temperatures. RF performances such as f_T, noise, and FR-power-amplifier efficiency were improved by this technology.

Keywords

Ge-Si alloys; MOSFET; dislocations; elemental semiconductors; leakage currents; semiconductor device breakdown; semiconductor junctions; silicon; MOSFET fabrication; RF performances; RF-power-amplifier efficiency; Si-SiGe; high breakdown voltage; junction depth control; low leakage current; misfit dislocations; strained-silicon MOSFET; thick strained-silicon layer; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS technology; Electrodes; Germanium silicon alloys; Impurities; Laboratories; Leakage current; MOSFETs; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469209

Filename

1469209