DocumentCode
3549783
Title
High capacitance density (> 17 fF/μm2) Nb2O5-based MIM capacitors for future RF IC applications
Author
Kim, Sun-Jung ; Cho, Byung Jin ; Yu, M.B. ; Li, M.-F. ; Xiong, Y.Z. ; Zhu, C. ; Chin, A. ; Kwong, D.L.
Author_Institution
Dept. of Electr. & Comput. Eng., National Univ. of Singapore, Singapore
fYear
2005
fDate
14-16 June 2005
Firstpage
56
Lastpage
57
Abstract
MIM capacitor with niobium pentoxide (Nb2O5) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb2O5 MIM with HfO2/Al2O3 barriers delivers a record high capacitance density >17 fF/μm2 with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.
Keywords
MIM devices; aluminium compounds; capacitors; copper; dielectric materials; hafnium compounds; leakage currents; niobium compounds; radiofrequency integrated circuits; semiconductor device reliability; semiconductor technology; Cu; Cu-BEOL process; K value; MIM capacitors; Nb2O5-HfO2-Al2O3; RF IC applications; RF bypass capacitor; high capacitance density; high-K dielectrics; leakage current; niobium pentoxide dielectric; reliability; Application specific integrated circuits; CMOS process; Capacitance; Dielectrics; Hafnium oxide; Leakage current; MIM capacitors; Niobium; Radio frequency; Radiofrequency integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN
4-900784-00-1
Type
conf
DOI
10.1109/.2005.1469210
Filename
1469210
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