HfSiON gate dielectrics design for mixed signal CMOS

Author

Kojima, K. ; Iijima, R. ; Ohguro, T. ; Watanabe, T. ; Takayanagi, M. ; Momose, H.S. ; Tshimaru, K. ; Ishiuchi, H.

Author_Institution

SoC Res. & Dev. Center, Toshiba Corp. Semicond. Co., Yokohama, Japan

fYear

2005

fDate

14-16 June 2005

Firstpage

58

Lastpage

59

Abstract

HfSiON is one of the most promising alternative gate dielectric materials for low standby power (LSTP) application. Recently, DC performance, gate leakage current, and reliability have been reported by T. Watanabe et al in 2004. However, study of analog performances of CMOS with HfSiON gate dielectrics is not sufficient. In this paper, we discuss 1/f noise and matching of CMOS with HfSiON gate dielectrics and predict trends in S_vg with technology scaling according to the ITRS roadmap based on Mikoshiba´s model. The HfSiON dielectric condition for mixed signal CMOS were investigated. In order to satisfy 1/f noise (S_vg) requirement from ITRS roadmap beyond hp65nm, the Nt must be below 1.5 × 10¹⁷ cm^-3eV^-1. The results of Vth matching were excellent even when HfSiO gate dielectric was applied to MOSFET.

Keywords

1/f noise; CMOS integrated circuits; MOCVD coatings; MOSFET; dielectric materials; hafnium compounds; mixed analogue-digital integrated circuits; nanotechnology; silicon compounds; 1/f noise; CMOS analog performance; DC performance; HfSiON; MOSFET; Mikoshiba model; Vth matching; gate dielectric materials; gate dielectrics design; gate leakage current; low standby power; mixed-signal CMOS; reliability; Degradation; Dielectrics; Electrodes; Fluctuations; Hafnium; Leakage current; MOS devices; MOSFETs; Semiconductor device noise; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469211

Filename

1469211