A comprehensive study of fully-silicided gates to achieve wide-range work function differences (0.91 eV) for high-performance CMOS devices

Author

Hosaka, K. ; Kurahashi, T. ; Kawamura, K. ; Aoyama, T. ; Mishima, Y. ; Suzuki, K. ; Sato, S.

Author_Institution

Fujitsu Labs. Ltd., Fujitsu Ltd., Tokyo, Japan

fYear

2005

fDate

14-16 June 2005

Firstpage

66

Lastpage

67

Abstract

We propose new methods to control the work function (WF) of nickel-fully-silicided (Ni-FUSI) gates. We clarified the amounts of segregated dopants, the status at the dielectric surface, and the composition of NiSi to determine the WF of the gates. We demonstrated the segregation mechanism for n- and p-type dopants during the silicidation processes. The amount of dopants used is effective for achieving wide-range WF. Nitridation of the gate oxide surface impacts both the WF of p-type gates and the oxide reliability. The Ni content of NiSi also changes the WF. These methods can be used to simultaneously control the WFs. Based on these three origins, we should be able to achieve wide-range WF differences (0.91 eV), suitable for use in 45-nm node CMOS devices.

Keywords

CMOS integrated circuits; MIS structures; electric breakdown; nanotechnology; nitridation; semiconductor doping; work function; 45 nm; CMOS device; Ni; Ni-FUSI gate; NiSi; dielectric surface; fully-silicided gate; gate oxide surface; n-type dopant; nickel-fully-silicided; nitridation; oxide reliability; p-type dopant; p-type gates; segregated dopants; silicidation process; work function control; Annealing; Boron; CMOS process; Dielectrics; Germanium; Laboratories; Photonic band gap; Shape; Silicidation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469214

Filename

1469214