Investigation of post-NBTI stress recovery in pMOSFETs by direct measurement of single oxide charge de-trapping

Author

Chan, C.T. ; Ma, H.C. ; Tang, C.J. ; Wang, Tahui

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan

fYear

2005

fDate

14-16 June 2005

Firstpage

90

Lastpage

91

Abstract

A novel method to study post-NBTI stress recovery in pMOSFETs is demonstrated by direct measurement of single-hole de-trapping behavior. Individual trapped hole emission in NBTI recovery is observed for the first time, which is manifested by the step-like evolution of channel current. By measuring trapped hole emission times and corresponding current jump, the dependence of NBTI recovery on stress hardness, recovery gate voltage and temperature, and gate length is characterized. An analytical model based on thermally-assisted tunneling of trapped oxide charges can successfully reproduce measured recovery characteristics.

Keywords

MOSFET; hole traps; semiconductor device measurement; tunnelling; NBTI; channel current; gate length; hole emission; pMOSFET; recovery gate voltage; single hole de-trapping; stress hardness; stress recovery; thermally-assisted tunneling; trapped oxide charge; Charge measurement; Current measurement; Length measurement; MOSFETs; Niobium compounds; Stress measurement; Temperature dependence; Thermal stresses; Titanium compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469224

Filename

1469224