Author :
Ahn, S.J. ; Hwang, Y.N. ; Song, Y.J. ; Lee, S.H. ; Lee, S.Y. ; Park, J.H. ; Jeong, C.W. ; Ryoo, K.C. ; Shin, J.M. ; Fai, Y. ; Oh, J.H. ; Koh, G.H. ; Jeong, G.T. ; Joo, S.H. ; Choi, S.H. ; Son, Y.H. ; Shin, J.C. ; Kim, Kinam ; Jeong, H.S. ; Kinam Kim
Author_Institution :
Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyunggi-Do, South Africa
Abstract :
Novel small contact fabrication technologies were proposed to realize reliable high density 256Mb PRAM(phase change memory) product. Introducing the 2-step CMP (chemical mechanical polishing) process and the ring-shaped contact structure, the contact area distribution was greatly improved even at the smallest contact diameter of 50nm node. The validity of this approach was directly confirmed by the evaluation of the functionality for the fabricated 256Mbit PRAM based on 0.10μm CMOS technology.
Keywords :
CMOS integrated circuits; chemical mechanical polishing; random-access storage; 0.10 micron; 50 nm; CMOS technology; PRAM; chemical mechanical polishing; contact cell technology; phase change memory; CMOS technology; Chemical technology; Computer aided engineering; Contact resistance; Fabrication; Phase change random access memory; Probability distribution; Research and development; Semiconductor device reliability; Writing;
