Title :
Highly reliable 50nm-thick PZT capacitor and low voltage FRAM device using Ir/SrRuO3/MOCVD PZT capacitor technology
Author :
Yoo, D.C. ; Bae, B.J. ; Lim, J.E. ; Im, D.H. ; Park, S.O. ; Kim, H.S. ; Chung, U. In ; Moon, J.T. ; Ryu, B.-I.
Author_Institution :
Semicond. R&D Div., Samsung Electron. Co. Ltd, Gyeonggi-Do, South Korea
Abstract :
For the first time, we successfully developed highly reliable 50nm-thick polycrystalline PZT capacitor using noble Ir/SrRuO3 top electrode and MOCVD PZT technology. In the 50nm-thick PZT capacitor, 33μC/cm2 of remanent polarization and 0.7V of saturation voltage have been demonstrated. Moreover, after 100hrs of bake-time at 150°C, opposite-state polarization margin was over 23μC/cm2, which is world-wide best result so far achieved. Using this capacitor technology, highly reliable low voltage operating embedded FRAM device was successfully developed.
Keywords :
MOCVD; MOCVD coatings; ferroelectric capacitors; iridium; lead compounds; random-access storage; ruthenium compounds; strontium compounds; thick film capacitors; titanium compounds; zirconium compounds; 50 nm; FRAM device; Ir-SrRuO3; MOCVD; PZT capacitor; PbZrO3TiO3; remanent polarization; saturation voltage; Capacitors; Degradation; Electrodes; Ferroelectric films; Ferroelectric materials; Low voltage; MOCVD; Nonvolatile memory; Polarization; Random access memory;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469228
