Title :
ΩFETs transistors with TiN metal gate and HfO2 down to 10nm
Author :
Jahan, C. ; Faynot, O. ; Cassé, M. ; Ritzenthaler, R. ; Brévard, L. ; Tosti, L. ; Garros, X. ; Vizioz, C. ; Allain, F. ; Papon, A.M. ; Dansas, H. ; Martin, F. ; Vinet, M. ; Guillaumot, B. ; Toffoli, A. ; Giffard, B. ; Deleonibus, S.
Author_Institution :
LETI-CEA, Grenoble, France
Abstract :
For the first time, TiN metal gate and high K gate dielectric (HfO2) have been successfully integrated on non planar ΩFETs transistors, with gate lengths down to 10nm. NMOS transistors exhibit an excellent ION/IOFF ratio of 5.105, the best value ever reported for a 10nm non planar device. The use of HfO2 reduces the gate leakage current by several orders of magnitude, for EOT of 1.92nm. Very low off-currents are measured with high on-currents, demonstrating the interest of such devices for low power applications.
Keywords :
MOSFET; dielectric materials; field effect transistors; hafnium compounds; leakage currents; low-power electronics; titanium compounds; ΩFETs transistors; 1.92 nm; 10 nm; HfO2; NMOS transistors; TiN; TiN metal gate; gate dielectric; gate leakage current; nonplanar device; Dry etching; FETs; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOS devices; MOSFETs; Tin; Wet etching;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469233
