Title :
A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications
Author :
Yeh, C.C. ; Wang, Tahui ; Liao, Y.Y. ; Tsai, W.J. ; Lu, Chih-Yuan ; Chen, M.S. ; Chen, Y.R. ; Chen, K.F. ; Han, Z.T. ; Wong, M.S. ; Hsu, S.M. ; Zous, N.K. ; On, T.F. ; Ting, WenChi ; Kit, J. ; Chih-Yuan Lu
Author_Institution :
Technol. Dev. Center, Macronix Int. Co.,Lt, Hsin-Chu, Taiwan
Abstract :
A novel NAND-type PHINES nitride trapping storage flash memory cell is proposed for the first time. PHINES memory cells use a SONOS cell structure, and are arranged in a modified NAND array. FN electron injection and band-to-band (BTB) hot-hole (HH) injection are utilized as the erase and the program operations, respectively. Read is performed by a novel BTB current sensing scheme. Physically 2-bits-per-cell storage, low power operation, and a high programming throughput are demonstrated.
Keywords :
NAND circuits; flash memories; semiconductor storage; silicon compounds; 2-bits-per-cell storage; BTB current sensing; FN electron injection; NAND array; PHINES memory cells; PHINES nitride trapping storage flash memory cell; SONOS cell structure; band-to-band hot-hole injection; mass storage applications; programming throughput; Degradation; Electron traps; Flash memory cells; Interchannel interference; Paper technology; Throughput; Very large scale integration; Voltage;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469234
