DocumentCode
3549811
Title
BAVI-cell: a novel high-speed 50 nm SONOS memory with band-to-band tunneling initiated avalanche injection mechanism
Author
Jae Sung Sim ; Il Han Park ; Han Park ; Seongjae Cho ; Tae Hun Kim ; Ki Whan Song ; Jihye Kong ; Hyungcheol Shin ; Jong Duk Lee ; Byung-Gook Park
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea
fYear
2005
fDate
14-16 June 2005
Firstpage
122
Lastpage
123
Abstract
A p-channel SONOS memory, based on band-to-band tunneling initiated avalanche hot-hole injection mechanism, was firstly proposed to solve the F-N erase problem in NAND flash application. The fabricated device with 50-nm gate length effectively suppressed the short channel effect and featured an excellent program and erase performance, where the time scale of a few and ∼100 μsec could be obtained, respectively.
Keywords
NAND circuits; flash memories; hot carriers; semiconductor-insulator-semiconductor devices; tunnelling; 50 nm; BAVI-cell; F-N erase problem; NAND flash application; avalanche hot-hole injection mechanism; avalanche injection mechanism; band-to-band tunneling; p-channel SONOS memory; short channel effect; Application software; CMOS technology; Computer science; Doping; Electrons; Hot carriers; Nonvolatile memory; SONOS devices; Tunneling; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN
4-900784-00-1
Type
conf
DOI
10.1109/.2005.1469237
Filename
1469237
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