Title :
Strain-induced very low noise RF MOSFETs on flexible plastic substrate
Author :
Kao, H.L. ; Chin, Alvin ; Hung, B.F. ; Lai, J.M. ; Lee, C.F. ; Li, M.-F. ; Samudra, Ganesh S. ; Zhu, C. ; Xia, Z.L. ; Liu, X.Y. ; Kang, J.F.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
Using microstrip line design to screen substrate resistance generated RF noise, very low 1.1 dB min. noise figure (NFmin) and high 12 dB associate gain are measured at 10 GHz of 0.18μm MOSFET on plastic without de-embedding. The die on plastic was thinned to 30μm that allows applying uniaxial strain to further lower the 10 GHz NFmin to only 0.92 dB and comparable well with the 0.13μm and 90nm nodes MOSFETs.
Keywords :
MOSFET; elemental semiconductors; etching; microstrip lines; nanotechnology; plastics; radiofrequency integrated circuits; silicon; 0.92 dB; 1.1 dB; 12 dB; Si; flexible plastic substrate; microstrip line design; strain-induced very low noise RF MOSFET; substrate resistance generated RF noise screening; uniaxial strain; Electrical resistance measurement; Gain measurement; MOSFETs; Microstrip; Noise figure; Noise generators; Noise measurement; Plastics; Radio frequency; Uniaxial strain;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469251
