• DocumentCode
    3549829
  • Title

    Quantitative analysis of contribution of initial traps to breakdown in HfAlOx/SiO2 stacked gate dielectrics

  • Author

    Okada, Kenji ; Ota, Hiroyuki ; Mizubayashi, Wataru ; Satake, Hideki ; Ogawa, Arito ; Iwamoto, Kunihiko ; Horikawa, Tsuyoshi ; Nabatame, Toshihide ; Toriumi, Akira

  • Author_Institution
    MIRAI-ASET, AIST, Ibaraki, Japan
  • fYear
    2005
  • fDate
    14-16 June 2005
  • Firstpage
    166
  • Lastpage
    167
  • Abstract
    We have demonstrated that the TDDB reliability should be predicted with the trap generation rate extracted excluding the amount of initial traps and that the initial trap cannot explain the low Weibull slope β observed in high-k stacks.
  • Keywords
    MOS capacitors; Weibull distribution; dielectric materials; electron traps; field effect transistors; hafnium compounds; semiconductor device breakdown; semiconductor device reliability; silicon compounds; HfAlO-SiO2; TDDB reliability; Weibull slope; high-k stacks; initial traps; quantitative analysis; stacked gate dielectric breakdown; trap generation rate; Degradation; Dielectric breakdown; Electric breakdown; Electronic mail; High K dielectric materials; High-K gate dielectrics; Kinetic theory; Steady-state; Stress; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
  • Print_ISBN
    4-900784-00-1
  • Type

    conf

  • DOI
    10.1109/.2005.1469253
  • Filename
    1469253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3549829