Title :
Quantitative analysis of contribution of initial traps to breakdown in HfAlOx/SiO2 stacked gate dielectrics
Author :
Okada, Kenji ; Ota, Hiroyuki ; Mizubayashi, Wataru ; Satake, Hideki ; Ogawa, Arito ; Iwamoto, Kunihiko ; Horikawa, Tsuyoshi ; Nabatame, Toshihide ; Toriumi, Akira
Author_Institution :
MIRAI-ASET, AIST, Ibaraki, Japan
Abstract :
We have demonstrated that the TDDB reliability should be predicted with the trap generation rate extracted excluding the amount of initial traps and that the initial trap cannot explain the low Weibull slope β observed in high-k stacks.
Keywords :
MOS capacitors; Weibull distribution; dielectric materials; electron traps; field effect transistors; hafnium compounds; semiconductor device breakdown; semiconductor device reliability; silicon compounds; HfAlO-SiO2; TDDB reliability; Weibull slope; high-k stacks; initial traps; quantitative analysis; stacked gate dielectric breakdown; trap generation rate; Degradation; Dielectric breakdown; Electric breakdown; Electronic mail; High K dielectric materials; High-K gate dielectrics; Kinetic theory; Steady-state; Stress; Thyristors;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469253
