Title :
Optimization and reliability characteristics of TiO/sub 2//HfO/sub 2/ multi-metal dielectric MOSFETs
Author :
Rhee, Se Jong ; Kim, Hyoung-Sub ; Kang, Chang Yong ; Choi, Chang Hwan ; Zhang, Manhong ; Zhu, Feng ; Tackhwi Lee ; Ok, Injo ; Akbar, Mohammad S. ; Krishnan, Siddarth A. ; Lee, Tackhwi
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
Optimization of TiO/sub 2//HfO/sub 2/ bi-layer dielectric MOSFETs and their breakdown behaviors have been investigated for the first time. As the ratio of TiO/sub 2/ top layer increases, reduced EOT, reduced hysteresis, and improved transistor characteristics with increasing electron and hole mobility are observed. Distribution of a two-step breakdown characteristics suggest the breakdown occurs first in the HfO/sub 2/ bottom layer.
Keywords :
MIS devices; MOSFET; annealing; dielectric materials; electron mobility; hafnium compounds; hole mobility; oxygen compounds; semiconductor device breakdown; semiconductor device reliability; sputter deposition; titanium compounds; MOSFET optimization; MOSFET reliability; TiO/sub 2/-HfO/sub 2/; bi-layer dielectric MOSFET; electron mobility; hole mobility; hysteresis; multimetal dielectric MOSFET; two-step breakdown; Annealing; Charge carrier processes; Dielectric breakdown; Electric breakdown; Electron mobility; Hafnium oxide; Hysteresis; MOSFET circuits; Permittivity; Temperature;
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-900784-00-1
DOI :
10.1109/.2005.1469254
