DocumentCode :
3549833
Title :
Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs
Author :
Andrieu, F. ; Ernst, T. ; Lime, F. ; Rochette, F. ; Romanjek, K. ; Barraud, S. ; Ravit, C. ; Boeuf, F. ; Jurczak, M. ; Casse, M. ; Weber, O. ; Brevard, L. ; Reimbold, G. ; Ghibaudo, G. ; Deleonibus, S.
Author_Institution :
CEA-LETI/DRT, Grenoble, France
fYear :
2005
fDate :
14-16 June 2005
Firstpage :
176
Lastpage :
177
Abstract :
We report a detailed comparison of low and high-Vd transport between various substrate- and process-induced strained MOSFETs down to 40nm gate lengths. Thanks to an original extraction method and low temperature measurements, we demonstrate that the mobility behaviour is deeply impacted by the down-scaling because of Coulomb scattering. Introducing this behaviour into a saturation current model, we clearly explain the ION enhancement trend of all strained devices.
Keywords :
MOSFET; electron mobility; high field effects; impurity scattering; nanoelectronics; piezoresistance; scattering; semiconductor device models; Coulomb scattering; ION enhancement trend; high field transport; low field transport; low temperature measurements; mobility behaviour; process-induced strained nanoscaled MOSFET; saturation current model; substrate-induced strained nanoscaled MOSFET; CMOS technology; Capacitive sensors; Germanium silicon alloys; MOSFETs; Nanoscale devices; Performance gain; Scattering; Silicon germanium; Temperature measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
Type :
conf
DOI :
10.1109/.2005.1469257
Filename :
1469257
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3549833
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