Experimental and comparative investigation of low and high field transport in substrate- and process-induced strained nanoscaled MOSFETs

Author

Andrieu, F. ; Ernst, T. ; Lime, F. ; Rochette, F. ; Romanjek, K. ; Barraud, S. ; Ravit, C. ; Boeuf, F. ; Jurczak, M. ; Casse, M. ; Weber, O. ; Brevard, L. ; Reimbold, G. ; Ghibaudo, G. ; Deleonibus, S.

Author_Institution

CEA-LETI/DRT, Grenoble, France

fYear

2005

fDate

14-16 June 2005

Firstpage

176

Lastpage

177

Abstract

We report a detailed comparison of low and high-Vd transport between various substrate- and process-induced strained MOSFETs down to 40nm gate lengths. Thanks to an original extraction method and low temperature measurements, we demonstrate that the mobility behaviour is deeply impacted by the down-scaling because of Coulomb scattering. Introducing this behaviour into a saturation current model, we clearly explain the I_ON enhancement trend of all strained devices.

Keywords

MOSFET; electron mobility; high field effects; impurity scattering; nanoelectronics; piezoresistance; scattering; semiconductor device models; Coulomb scattering; I_ON enhancement trend; high field transport; low field transport; low temperature measurements; mobility behaviour; process-induced strained nanoscaled MOSFET; saturation current model; substrate-induced strained nanoscaled MOSFET; CMOS technology; Capacitive sensors; Germanium silicon alloys; MOSFETs; Nanoscale devices; Performance gain; Scattering; Silicon germanium; Temperature measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469257

Filename

1469257