DocumentCode :
3549834
Title :
High current drive uniaxially-strained SGOI pMOSFETs fabricated by lateral strain relaxation technique
Author :
Irisawa, Toshifumi ; Nuipata, T. ; Tezuka, Tsutomu ; Usuda, Koji ; Hirashita, Norio ; Sugiyama, Naoharu ; Toyoda, Eiji ; Takagi, Shin-ichi
Author_Institution :
MIRAI-ASET, Kawasaki, Japan
fYear :
2005
fDate :
14-16 June 2005
Firstpage :
178
Lastpage :
179
Abstract :
Novel uniaxially-strained SiGe-on-insulator (SGOI) pMOSFETs are successfully fabricated by utilizing lateral strain relaxation process and the mobility enhancement of 100% is realized in spite of low Ge content (20%). This high mobility enhancement is maintained in high vertical effective fields as well as in short channel devices. As a result, Ion enhancement of 80% is demonstrated in 40 nm gate length uniaxially-strained SGOI pMOSFETs.
Keywords :
Ge-Si alloys; MOSFET; carrier mobility; metal-insulator boundaries; nanoelectronics; silicon-on-insulator; SiGe-on-insulator; high current drive uniaxially-strained SGOI pMOSFET; lateral strain relaxation; mobility enhancement; Capacitive sensors; Compressive stress; Fabrication; Germanium silicon alloys; Lattices; MOSFETs; Silicon germanium; Strain measurement; Tensile stress; Uniaxial strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN :
4-900784-00-1
Type :
conf
DOI :
10.1109/.2005.1469258
Filename :
1469258
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3549834
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