Highly scalable MRAM using field assisted current induced switching

A novel MRAM structure using current induced switching is implemented and evaluated. The current for switching, assisted by local field, was 1mA with 19 % magneto-resistance at 100 mV bias voltage. 0.2×0.3 μm² magnetic elements were integrated with standard CMOS process and a magnetic tunnel junction was optimized to obtain enough sensing signal. The resistance of tunnel junction was controlled to improve sensing margin. The novel structure has the possibility of reducing cell size to 6F, in which digit lines are unnecessary, and can minimize the writing disturbance. This novel structure is the excellent candidate for MRAM as one of universal memory.