Author :
Durlam, M. ; Andre, T. ; Brown, P. ; Calder, J. ; Chan, J. ; Cuppens, R. ; Dave, R.W. ; Ditewig, T. ; DeHerrera, M. ; Engel, B.N. ; Feil, B. ; Frey, C. ; Galpin, D. ; Garni, B. ; Grynkewich, G. ; Janesky, J. ; Kerszykowski, G. ; Lien, M. ; Martin, J. ; Na
Author_Institution :
Freescale Semicond., Chandler, AZ, USA
Abstract :
A 90nm magnetoresistive random access memory (MRAM) based on the toggle switching mode has been successfully demonstrated for the first time in a 90nm CMOS process. The MRAM memory cell is based on a 1-transistor 1-magnetic tunnel junction (1T1MTJ) with 0.29μm2bit cell. The results of the 4k bit array demonstrate scalability of MRAM to 90nm technology.
Keywords :
CMOS memory circuits; cellular arrays; magnetic tunnelling; magnetoresistance; memory architecture; nanoelectronics; random-access storage; 1-transistor 1-magnetic tunnel junction; 4 kbit/s; 90 nm; CMOS process; MRAM memory cell; magnetoresistive random access memory; toggle MRAM array; toggle switching mode; CMOS process; CMOS technology; Circuits; Magnetic materials; Magnetic separation; Magnetic switching; Magnetic tunneling; Read-write memory; Sun; Switches;
