Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current

Author

Suzuki, T. ; Fukumoto, Y. ; Mori, K. ; Honjo, H. ; Nebashi, R. ; Miura, S. ; Nagahara, K. ; Saito, S. ; Numata, H. ; Tsuji, K. ; Sugibayashi, T. ; Hada, H. ; Ishiwata, N. ; Asao, Y. ; Ikegawa, S. ; Yoda, H. ; Tahara, S.

Author_Institution

Labs. of Syst. Devices Res., NEC Corp., Kanagawa, Japan

fYear

2005

fDate

14-16 June 2005

Firstpage

188

Lastpage

189

Abstract

Toggling MRAM with four antiferromagnetically (AF) coupled ferromagnetic (FM) layers is proposed. The AF coupling strength between the inner FM layers should be larger than between the others. The four-FM-layer toggle cell shows not only good thermal stability but also a large write margin even with a small spin flop field. The advanced toggle cell has the potential to decrease write current by half compared with the basic two-FM-layer cell and can improve MRAM scalability.

Keywords

cellular arrays; ferromagnetic materials; memory architecture; nanoelectronics; random-access storage; switching circuits; thermal stability; antiferromagnetically coupled ferromagnetic layers; high density MRAM; large write margin; low switching current; small spin flop field; thermal stability; toggling MRAM; toggling cell; Antiferromagnetic materials; Automatic frequency control; CMOS technology; Energy barrier; Laboratories; National electric code; Nonvolatile memory; Scalability; Thermal stability; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469262

Filename

1469262