Title :
A 2 GHz enhancement mode GaAs down converter IC for satellite TV tuner
Author :
Philippe, P. ; Pertus, M.
Author_Institution :
Lab. d´´Electron. Philips, Limeil-Brevannes, France
Abstract :
A fully integrated 2-GHz downconverter IC has been designed and fabricated for satellite TV application using an enhancement-mode GaAs foundry process. Its internal oscillator covers a 1.2-GHz bandwidth that allows one to receive the extended satellite TV band from 950 MHz to 2 GHz. The local-oscillator power leakage is greatly reduced as compared to a discrete circuit: it is about -40 dBm at the RF input and less than -30 dBm at the intermediate-frequency output. This IC operates under a single 5-V supply voltage, and its performance is an outstanding tradeoff between noise, linearity, power consumption, and simplicity of implementation. It is encapsulated in a standard low-cost plastic package.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; direct broadcasting by satellite; field effect integrated circuits; frequency convertors; gallium arsenide; mixers (circuits); 5 V; 950 to 2000 MHz; GaAs; IC operates; bandwidth; downconverter IC; enhancement mode; extended satellite TV band; internal oscillator; linearity; local-oscillator power leakage; low-cost plastic package; noise; performance; power consumption; satellite TV tuner; semiconductors; simplicity of implementation; single 5-V supply voltage; Application specific integrated circuits; Bandwidth; Foundries; Gallium arsenide; Integrated circuit noise; Oscillators; Radio frequency; Satellite broadcasting; TV; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.146927
