Hf-silicate inter-poly dielectric technology for sub 70nm body tied FinFET flash memory

Author

Cho, Eun Suk ; Lee, Choong-Ho ; Kim, Tae-Yong ; Sung, Suk-Kang ; Cho, Byung Kyu ; Lee, Chul ; Cho, Hye Jin ; Roh, Yonghan ; Park, Donggun ; Kim, Kinam ; Ryu, Byung-Il

Author_Institution

Semicond. R&D Center, Samsung Electron. Co., Gyeonggi-Do, South Korea

fYear

2005

fDate

14-16 June 2005

Firstpage

208

Lastpage

209

Abstract

We report for the first time on 256Mb NOR-type body tied FinFET flash memory using Hf silicate IPD (inter poly dielectric) and compare with FinFET flash memory using traditional ONO IPD. An enlarged coupling ratio through Hf silicate IPD enhanced a CHEI (channel hot electron injection) programming speed and made the operation voltage down. And we could obtain a higher erasing speed resulted from HHI (hot hole injection) erase than that of F-N tunneling without degrading endurance characteristics.

Keywords

MIS structures; MOSFET; charge injection; flash memories; hafnium compounds; hot carriers; 256 MByte; 256Mb NOR-type body tied FinFET flash memory; F-N tunneling; Hf-silicate interpoly dielectric technology; ONO IPD; channel hot electron injection; hot hole injection erase; Capacitance; Degradation; Dielectric constant; FinFETs; Flash memory; Hafnium; Leakage current; Nonvolatile memory; Oxidation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on

Print_ISBN

4-900784-00-1

Type

conf

DOI

10.1109/.2005.1469270

Filename

1469270