X-band MMIC amplifier with pulse-doped GaAs MESFETs

Author

Shiga, Nobuo ; Nakajima, Shigeru ; Otobe, Kenji ; Sekiguchi, Takeshi ; Kuwata, Nobuhiro ; Matsuzaki, Ken-Ichiro ; Hayashi, Hideki

Author_Institution

Sumitomo Electr. Ind., Ltd., Yokohama, Japan

fYear

1991

fDate

10-14 July 1991

Firstpage

77

Abstract

An X-band monolithic low noise amplifier (LNA) with 0.5- mu -gate pulse-doped GaAs MESFETs was successfully demonstrated for a direct-broadcast-satellite (DBS) converter. This LNA shows excellent voltage standing wave ratio (VSWR) matches of under 1.4 as well as a noise figure of 1.67 dB and a gain 24 dB at 12 GHz. The yield of chips within microwave specifications is 62.5%.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; 0.5 micron; 1.67 dB; 12 GHz; 24 dB; DBS convertor; GaAs; LNA; MESFETs; MMIC amplifier; VSWR; X-band; direct-broadcast-satellite; gain; low noise amplifier; microwave specifications; noise figure; pulse-doped; voltage standing wave ratio; yield of chips; Gallium arsenide; HEMTs; Low-noise amplifiers; MESFETs; MMICs; Monolithic integrated circuits; Noise figure; Pulse amplifiers; Research and development; Satellite broadcasting;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.146928

Filename

146928