DocumentCode
3549860
Title
High performing 8 A EOT HfO2/TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions
Author
Ragnarsson, L. Å ; Severi, S. ; Trojman, L. ; Brunco, D.P. ; Johnson, K.D. ; Delabie, A. ; Schram, T. ; Tsai, W. ; Groeseneken, G. ; De Meyer, K. ; De Gendt, S. ; Heyns, M.
Author_Institution
IMEC, Hillsboro, OR, USA
fYear
2005
fDate
14-16 June 2005
Firstpage
234
Lastpage
235
Abstract
We demonstrate high-performing w-channel transistors with a HfO2/TaN gate stack and a low thermal budget process (570°C anneal). The thinnest devices have an EOT of 8.3 A, a leakage current of 2.6 A/cm2 at VG=1 V, and a drive-current of 815 μA/um at an off-state current of 0.1 μA/μm for VDD=1.2 V. We show that the performance improvement over identical gate-stacks processed with a 1000°C spike anneal is related to a difference in VT.
Keywords
MIS devices; annealing; dielectric materials; epitaxial growth; field effect transistors; hafnium compounds; leakage currents; semiconductor junctions; HfO2-TaN; drive current; gate stacks; high-performing w-channel transistors; leakage current; low thermal budget process; low thermal-budget n-channel FET; off-state current; solid-phase epitaxially regrown junction; Annealing; Capacitance-voltage characteristics; Capacitors; Dielectrics; FETs; Hafnium oxide; Implants; Leakage current; Permittivity; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on
Print_ISBN
4-900784-00-1
Type
conf
DOI
10.1109/.2005.1469281
Filename
1469281
Link To Document