Statistical modeling of GaAs MESFETs

Author

Bandler, J.W. ; Biernacki, R.M. ; Chen, S.H. ; Song, J. ; Ye, S. ; Zhang, Q.J.

Author_Institution

McMaster Univ., Hamilton, Ont., Canada

fYear

1991

fDate

10-14 July 1991

Firstpage

87

Abstract

The authors contrast the statistical extraction of GaAs MESFET equivalent circuit model parameters and physical model parameters from wafer measurements. It is observed that the equivalent-circuit model of A. Materka and T. Kacprzak (1985) provides a better match for individual devices but the model based on physical parameters of P.H. Ladbrooke (1989) provides a better estimate of device statistics. It is also shown that the Materka and Kacprzak equivalent-circuit model can accurately fit the data from which the model parameters are extracted, because it has fewer constraints than the physical model.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; GaAs; GaAs MESFETs; Ladbrooke model; Materka and Kacprzak model; device statistics; equivalent circuit model parameters; equivalent-circuit model; individual devices; physical model parameters; semiconductors; statistical extraction; wafer measurements; Computational modeling; Data mining; Electrons; Equivalent circuits; FETs; Gallium arsenide; MESFETs; Semiconductor device modeling; Statistics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.146931

Filename

146931