Accurate nonlinear transistor modeling using pulsed S parameters measurements under pulsed bias conditions

Author

Vidalou, J.F. ; Grossier, J.F. ; Chaumas, M. ; Camiade, M. ; Roux, P. ; Obregon, J.

Author_Institution

Limoges Univ., France

fYear

1991

fDate

10-14 July 1991

Firstpage

95

Abstract

An improved method for accurate nonlinear modeling of transistors is proposed. It makes it possible to overcome the drawbacks of the methods generally used. It is based on pulsed S parameter measurements under pulsed bias conditions. This procedure takes into account dynamical variations without varying the temperature of the device under test. The method has been used successfully with FET transistors and may be extended to very-high-power bipolar transistors used in pulse (class C) radar applications.<>

Keywords

S-parameters; bipolar transistors; field effect transistors; nonlinear network analysis; semiconductor device models; solid-state microwave devices; FET transistors; accurate nonlinear modeling; class C operation; dynamical variations; pulse radar; pulsed S parameters measurements; pulsed bias conditions; transistor modeling; very-high-power bipolar transistors; Bipolar transistors; Breakdown voltage; Current measurement; FETs; MMICs; Microwave integrated circuits; Power measurement; Pulse amplifiers; Pulse measurements; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.146933

Filename

146933