Title :
Accurate nonlinear transistor modeling using pulsed S parameters measurements under pulsed bias conditions
Author :
Vidalou, J.F. ; Grossier, J.F. ; Chaumas, M. ; Camiade, M. ; Roux, P. ; Obregon, J.
Author_Institution :
Limoges Univ., France
Abstract :
An improved method for accurate nonlinear modeling of transistors is proposed. It makes it possible to overcome the drawbacks of the methods generally used. It is based on pulsed S parameter measurements under pulsed bias conditions. This procedure takes into account dynamical variations without varying the temperature of the device under test. The method has been used successfully with FET transistors and may be extended to very-high-power bipolar transistors used in pulse (class C) radar applications.<>
Keywords :
S-parameters; bipolar transistors; field effect transistors; nonlinear network analysis; semiconductor device models; solid-state microwave devices; FET transistors; accurate nonlinear modeling; class C operation; dynamical variations; pulse radar; pulsed S parameters measurements; pulsed bias conditions; transistor modeling; very-high-power bipolar transistors; Bipolar transistors; Breakdown voltage; Current measurement; FETs; MMICs; Microwave integrated circuits; Power measurement; Pulse amplifiers; Pulse measurements; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.146933
